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Voltage-dependent spin flip in magnetically substituted graphene nanoribbons: Towards the realization of graphene-based spintronic devices
Stockholms universitet, Nordiska institutet för teoretisk fysik (Nordita). Los Alamos National Laboratory, USA.
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Rekke forfattare: 52017 (engelsk)Inngår i: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, Vol. 95, nr 15, artikkel-id 155450Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

We examine the possibility of using graphene nanoribbons (GNRs) with directly substituted chromium atoms as a spintronic device. Using density functional theory, we simulate a voltage bias across a constructed GNR in a device setup where a magnetic dimer has been substituted into the lattice. Through this first-principles approach, we calculate the electronic and magnetic properties as a function of Hubbard U, voltage, and magnetic configurations. By calculating the total energy of each magnetic configuration, we determine that the initial antiferromagnetic ground state flips to a ferromagnetic state with applied bias. Mapping this transition point to the calculated conductance for the system reveals that there is a distinct change in conductance through the GNR, which indicates the possibility of a spin valve. We also show that this corresponds to a distinct shift in the induced magnetization within graphene.

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2017. Vol. 95, nr 15, artikkel-id 155450
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URN: urn:nbn:se:su:diva-143556DOI: 10.1103/PhysRevB.95.155450ISI: 000400253700001OAI: oai:DiVA.org:su-143556DiVA, id: diva2:1104907
Tilgjengelig fra: 2017-06-02 Laget: 2017-06-02 Sist oppdatert: 2017-11-29bibliografisk kontrollert

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