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Layer and orbital interference effects in photoemission from transition metal dichalcogenides
Stockholm University, Nordic Institute for Theoretical Physics (Nordita).
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Number of Authors: 132019 (English)In: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, Vol. 100, no 23, article id 235423Article in journal (Refereed) Published
Abstract [en]

In this work, we provide an effective model to evaluate the one-electron dipole matrix elements governing optical excitations and the photoemission process of single-layer (SL) and bilayer (BL) transition metal dichalcogenides. By utilizing a k . p Hamiltonian, we calculate the photoemission intensity as observed in angle-resolved photoemission from the valence bands around the (K) over bar valley of MoS2. In SL MoS2, we find a significant masking of intensity outside the first Brillouin zone, which originates from an in-plane interference effect between photoelectrons emitted from the Mo d orbitals. In BL MoS2, an additional interlayer interference effect leads to a distinctive modulation of intensity with photon energy. Finally, we use the semiconductor Bloch equations to model the optical excitation in a time- and angle-resolved pump-probe photoemission experiment. We find that the momentum dependence of an optically excited population in the conduction band leads to an observable dichroism in both SL and BL MoS2.

Place, publisher, year, edition, pages
2019. Vol. 100, no 23, article id 235423
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Physical Sciences
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URN: urn:nbn:se:su:diva-177455DOI: 10.1103/PhysRevB.100.235423ISI: 000502266500006OAI: oai:DiVA.org:su-177455DiVA, id: diva2:1385724
Available from: 2020-01-15 Created: 2020-01-15 Last updated: 2020-01-15Bibliographically approved

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Rostami, HabibBalatsky, Alexander
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