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Word and bit line operation of a 1 x 1 μm2 superconducting vortex-based memory
Stockholm University, Faculty of Science, Department of Physics. Stockholm University, Faculty of Science, Department of Materials and Environmental Chemistry (MMK).
Stockholm University, Faculty of Science, Department of Physics.
Stockholm University, Faculty of Science, Department of Physics.ORCID iD: 0000-0002-3131-8658
2023 (English)In: Nature Communications, E-ISSN 2041-1723, Vol. 14, no 1, article id 4926Article in journal (Refereed) Published
Abstract [en]

The lack of dense random access memory is one of the main bottlenecks for the creation of a digital superconducting computer. In this work we study experimentally vortex-based superconducting memory cells. Three main results are obtained. First, we test scalability and demonstrate that the cells can be straightforwardly miniaturized to submicron sizes. Second, we emphasize the importance of conscious geometrical engineering. In the studied devices we introduce an asymmetric easy track for vortex motion and show that it enables a controllable manipulation of vortex states. Finally, we perform a detailed analysis of word and bit line operation of a 1 x 1 mu m(2) cell. High-endurance, non-volatile operation at zero magnetic field is reported. Remarkably, we observe that the combined word and bit line threshold current is significantly reduced compared to the bare word-line operation. This could greatly improve the selectivity of individual cell addressing in a multi-cell RAM. The achieved one square micron area is an important milestone and a significant step forward towards creation of a dense cryogenic memory.

Place, publisher, year, edition, pages
2023. Vol. 14, no 1, article id 4926
National Category
Astronomy, Astrophysics and Cosmology
Identifiers
URN: urn:nbn:se:su:diva-223759DOI: 10.1038/s41467-023-40654-7ISI: 001051523700007PubMedID: 37582835Scopus ID: 2-s2.0-85168067364OAI: oai:DiVA.org:su-223759DiVA, id: diva2:1812314
Available from: 2023-11-15 Created: 2023-11-15 Last updated: 2023-11-15Bibliographically approved

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Golod, TarasKrasnov, Vladimir M.

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