Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Memory-functionality superconductor/ferromagnet/superconductor junctions based on the high-Tc cuprate superconductors YBa2Cu3O7-x and the colossal magnetoresistive manganite ferromagnets La2/3X1/3MnO3+δ (X = Ca, Sr)
Stockholm University, Faculty of Science, Department of Physics. University of Fribourg, Switzerland.
Stockholm University, Faculty of Science, Department of Physics.
Stockholm University, Faculty of Science, Department of Physics.
Stockholm University, Faculty of Science, Department of Physics.
Show others and affiliations
Number of Authors: 62019 (English)In: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, Vol. 99, no 21, article id 214510Article in journal (Refereed) Published
Abstract [en]

Complex oxides exhibit a variety of unusual physical properties, which can be used for designing novel electronic devices. Here we fabricate and study experimentally nanoscale superconductor/ferromagnet/superconductor junctions with the high-T-c cuprate superconductors YBa2Cu3O7-x and the colossal magnetoresistive (CMR) manganite ferromagnets La2/3X1/3MnO3+delta (X=Ca or Sr). We demonstrate that in a broad temperature range the magnetization of a manganite nanoparticle, forming the junction interface, switches abruptly in a monodomain manner. The CMR phenomenon translates the magnetization loop into a hysteretic magnetoresistance loop. The latter facilitates a memory functionality of such a junction with just a single CMR ferromagnetic layer. The orientation of the magnetization (stored information) can be read out by simply measuring the junction resistance in a finite magnetic field. The CMR facilitates a large readout signal in a small applied field. We argue that such a simple single-layer CMR junction can operate as a memory cell both in the superconducting state at cryogenic temperatures and in the normal state up to room temperature.

Place, publisher, year, edition, pages
2019. Vol. 99, no 21, article id 214510
National Category
Physical Sciences
Research subject
Physics
Identifiers
URN: urn:nbn:se:su:diva-171104DOI: 10.1103/PhysRevB.99.214510ISI: 000473009200002OAI: oai:DiVA.org:su-171104DiVA, id: diva2:1343571
Available from: 2019-08-17 Created: 2019-08-17 Last updated: 2019-09-11Bibliographically approved
In thesis
1.
The record could not be found. The reason may be that the record is no longer available or you may have typed in a wrong id in the address field.

Open Access in DiVA

No full text in DiVA

Other links

Publisher's full text

Search in DiVA

By author/editor
de Andrés Prada, RobertoGolod, TarasKapran, Olena M.Borodianskyi, Evgenii A.Krasnov, Vladimir M.
By organisation
Department of Physics
In the same journal
Physical Review B
Physical Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf