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The effect of Mg doping on the thermoelectric performance of Zn4Sb3: International Conference on Thermoelectrics
Stockholm University, Faculty of Science, Department of Physical, Inorganic and Structural Chemistry.
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2008 (English)In: Institute of Electrical and Electronics Engineers, ISSN 1094-2734, 382-385 p.Article in journal (Refereed) Published
Abstract [en]

The effect of Mg doping of Zn4Sb3 on thermal and thermoelec. properties has been studied on 4 samples with a doping degree ranging from 0.1 to 2 at.% Mg, and compared to a pure, undoped sample. Lab. X-ray powder diffraction shows that all samples are pure single phase materials as further evidenced with higher confidence by Rietveld refinement of high resoln. synchrotron powder diffraction of the as synthesized 1 at.% and 2 at.% Mg doped samples. Zn4Sb3 undergoes a transition from the room temp. disordered  phase to an ordered ' phase, going over an intermediate  phase; differential scanning calorimetry show only small effects of doping on the phase transition temp. Phys. properties have been evaluated from 2-400 K for all samples. Some phys. property parameters are affected by doping, but no immediate improvement of ZT was achieved by the doping procedure. The reason for this is discussed in relation to differences in sample compaction.

Place, publisher, year, edition, pages
2008. 382-385 p.
URN: urn:nbn:se:su:diva-15133OAI: diva2:181653
Available from: 2008-11-22 Created: 2008-11-22 Last updated: 2011-01-10Bibliographically approved

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