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In-Situ Growth of Embryonic TS-1 on Amorphous Silica via Steam-Assisted Crystallization: Correlation of Structural Properties and Catalytic Performance of Embryonic, Crystalline, and Amorphous Titanosilicate Catalysts
Stockholm University, Faculty of Science, Department of Materials and Environmental Chemistry (MMK), Inorganic and Structural Chemistry.ORCID iD: 0000-0001-7286-1211
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Number of Authors: 52023 (English)In: Crystal Growth & Design, ISSN 1528-7483, E-ISSN 1528-7505, Vol. 23, no 7, p. 4883-4895Article in journal (Refereed) Published
Abstract [en]

In-situ growth of supported embryonic TS-1 zeolite (<10nm)on a silica support was achieved by steam-assisted crystallization(SAC). The use of low amounts of TPABr and steam at a moderate temperatureof 130 degrees C was the key factor to control partial transformationof silica into supported embryonic TS-1. Compared with the referencecrystalline TS-1, supported embryonic TS-1 exhibits a higher activityin dibenzothiophene (DBT) oxidation (TOF: 8-275 h(-1) vs 2.7-160 h(-1) at 30-98 degrees C),a higher resistance to poisoning by nitrogen-containing compounds,and a higher selectivity (>97%) in the productive utilization oftheoxidant in DBT oxidation. The activity of the amorphous titanosilicate(TOF: 21.2-210 h(-1) at 30-80 degrees C),the solid precursor of the SAC process, was higher than that of theembryonic and the crystalline TS-1. The analysis of the structuralproperties-catalytic performance of these catalysts showedan improved accessibility to defective Ti active sites Ti(OH)(OSi)(3) with higher catalytic activity. The results of thisstudy should be encouraging to unearth many other active amorphouscatalysts with the potential of industrial application. 

Place, publisher, year, edition, pages
2023. Vol. 23, no 7, p. 4883-4895
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Materials Chemistry
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URN: urn:nbn:se:su:diva-229932DOI: 10.1021/acs.cgd.3c00107ISI: 001006179500001Scopus ID: 2-s2.0-85164363152OAI: oai:DiVA.org:su-229932DiVA, id: diva2:1862698
Available from: 2024-05-30 Created: 2024-05-30 Last updated: 2024-10-16Bibliographically approved

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Tai, Cheuk-Wai

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