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Optical and electronic properties of thermoelectric Zn4Sb3 across the low-temperature phase transitions
Stockholm University, Faculty of Science, Department of Physical, Inorganic and Structural Chemistry.
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2007 In: Applied Physical Letters, Vol. 90, 181920-181923 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2007. Vol. 90, 181920-181923 p.
Identifiers
URN: urn:nbn:se:su:diva-24849ISI: 000246210000051OAI: oai:DiVA.org:su-24849DiVA: diva2:198418
Note
Part of urn:nbn:se:su:diva-7495Available from: 2008-04-24 Created: 2008-04-18Bibliographically approved
In thesis
1. Low Temperature Structural and Property investigations in the Zn-Sb System
Open this publication in new window or tab >>Low Temperature Structural and Property investigations in the Zn-Sb System
2008 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Thermoelectric Zn4Sb3 has a randomly disordered crystal structure at room temperature and undergoes a reversible sequence of phase transitions, β-α-α’/α, at low temperatures. During the transformations interstitial Zn atoms and Zn vacancies present in the β-phase become increasingly ordered. The low-temperature structures α and α’ can be described by differently stacked layers A (interstitial free) and B (containing five-atom Zn clusters).The Zn/Sb ratio can be slightly altered by small amounts of metal doping achieved by growing the crystals in a metal flux. The small doping amounts (< 1 at.%) have, however, a large impact on the structural low-temperature behavior. First principles calculations show β-Zn4Sb3 to be thermodynamically stable because of the large entropy contribution from the disordered Zn substructure and that ordered α-Zn4Sb3 is meatstable with respect to a decomposition into ZnSb and Sb. Resistivity, thermopower and charge carrier properties at low temperatures have been investigated for both binary and metal doped samples. Preliminary studies of the high pressure structural behavior of zinc antimonides have also been made. Both ZnSb and β-Zn4Sb3 showed to be stable up to 8 GPa, which is in disagreement with earlier reports. Amorphous Zn41Sb59 could be produced at 8 GPa and temperatures between 350 and 550 oC in a multi anvil apparatus.

Place, publisher, year, edition, pages
Stockholm: Institutionen för fysikalisk kemi, oorganisk kemi och strukturkemi, 2008. 77 p.
Keyword
Thermoelectrics, Zinc antimmonides, Metal doped semiconductors
National Category
Chemical Sciences
Research subject
Inorganic Chemistry
Identifiers
urn:nbn:se:su:diva-7495 (URN)978-91-7155-651-6 (ISBN)
Public defence
2008-05-16, Magnélisalen, Kemiska övningslaboratoriet, Svante Arrhenius väg 12 A, Stockholm, 13:00
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Available from: 2008-04-24 Created: 2008-04-18Bibliographically approved

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