Recombination rate coefficients of Be-like Si
2010 (English)In: Astrophysical Journal, ISSN 0004-637X, E-ISSN 1538-4357, Vol. 721, no 2, 1603-1607 p.Article in journal (Refereed) Published
Recombination rate coefficients for Be-like Si10+ recombining into B-like Si9+ are derived froma measurement at an electron cooler device. The recombination spectrum shows strong contributionsfrom trielectronic recombination. Below 100 meV several very strong resonances associatedwith a spin-flip of the excited electron dominate the spectrum and also dominate thelow-temperature plasma recombination rate coefficents. Calculated rate coefficients are used toestimate the metastable fraction of the ion beam in the experiment and are also used to estimatethe amount of recombined ions that were not detected in the experiment, because of fieldionization. The resonant plasma rate coefficients corrected for the experimental field ionizationare in good agreement with calculated results by Gu (2003) and with AUTOSTRUCTURE calculations.All other calculations significantly underestimate the plasma rate coefficients at lowtemperatures.
Place, publisher, year, edition, pages
2010. Vol. 721, no 2, 1603-1607 p.
atomic data, atomic processes, plasmas
IdentifiersURN: urn:nbn:se:su:diva-33248DOI: 10.1088/0004-637X/721/2/1603OAI: oai:DiVA.org:su-33248DiVA: diva2:282768