We describe a device to study reactions relevant for the Single Event Effect (SEE) in microelectronics by means of 200A and 300AMeV, inverse kinematics, Si + H and Si + D reactions. The work is focused on the possibility to measure Z = 2-14 projectile fragments as efficiently as possible. During commissioning and first experiments the fourth quadrant of the CELSIUS storage ring acted as a spectrometer to register fragments in two planes of Si strip detectors in the angular region 0 degrees-0.6 degrees. A combination of ring-structured and sector-structured Si strip detector planes operated at angles 0.6 degrees-1.1 degrees. For specific event tagging a Si+ phoswich scintillator wall operated in the range 3.9 degrees-11.7 degrees and Si Delta E-E telescopes of CHICSi type operated at large angles.