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Optical and electronic properties of metal doped thermoelectric Zn4Sb3
Stockholm University, Faculty of Science, Department of Materials and Environmental Chemistry (MMK), Inorganic and Structural Chemistry.
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2008 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 103, no 12, 123524Article in journal (Refereed) Published
Abstract [en]

Optical and electronic properties of metal (Pb, Bi, Sn, and In) doped Zn4Sb3 are reported in the temperature range 80-300 K, which covers the beta, alpha, and alpha(') structural phases of this thermoelectric material. Metal doping alters the subtle balance between Zn disorder and Zn deficiency present in beta-Zn4Sb3 and changes its low temperature structural behavior. Analysis of infrared reflection data shows that the formation of ordered alpha'-Zn4Sb3 is accompanied by a substantial increase in the free charge-carrier concentration. In contrast, for samples where doping suppresses the occurrence of the low temperature alpha'-phase, the free charge-carrier concentration is only weakly temperature dependent. Different degrees of structural disorder in doped beta-Zn4Sb3 and the ordering processes at low temperatures leading to alpha- and alpha'-Zn4Sb3 are also recognized in the charge-carrier dynamics. 

Place, publisher, year, edition, pages
2008. Vol. 103, no 12, 123524
Keyword [en]
phonon-glass, material beta-zn4sb3, phase-transition, temperature, alpha-zn4sb3, crystals, zinc
National Category
Chemical Sciences
URN: urn:nbn:se:su:diva-58509DOI: 10.1063/1.2946450ISI: 000257284100042OAI: diva2:420702

authorCount :5

Available from: 2011-06-03 Created: 2011-06-03 Last updated: 2015-12-04Bibliographically approved

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Nylén, Johanna
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