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In situ x-ray photoelectron spectroscopy studies of water on metals and oxides at ambient conditions
Stockholm University, Faculty of Science, Department of Physics.
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2008 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 20, no 18, p. 184025-Article, review/survey (Refereed) Published
Abstract [en]

X-ray photoelectron spectroscopy (XPS) is a powerful tool for surface and interface analysis, providing the elemental composition of surfaces and the local chemical environment of adsorbed species. Conventional XPS experiments have been limited to ultrahigh vacuum (UHV) conditions due to a short mean free path of electrons in a gas phase. The recent advances in instrumentation coupled with third-generation synchrotron radiation sources enables in situ XPS measurements at pressures above 5 Torr. In this paper, we describe the basic design of the ambient pressure XPS setup that combines differential pumping with an electrostatic focusing. We present examples of the application of in situ XPS to studies of water adsorption on the surface of metals and oxides including Cu(110), Cu(111), TiO2(110) under environmental conditions of water vapor pressure. On all these surfaces we observe a general trend where hydroxyl groups form first, followed by molecular water adsorption. The importance of surface OH groups and their hydrogen bonding to water molecules in water adsorption on surfaces is discussed in detail.

Place, publisher, year, edition, pages
2008. Vol. 20, no 18, p. 184025-
Keywords [en]
gas shift reaction, advanced light-source, surface science, dissociative adsorption, cu(110) surface, electron-spectroscopy, molecular adsorption, tio2(110) surfaces, aqueous-solutions, titanium-dioxide
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:su:diva-58570DOI: 10.1088/0953-8984/20/18/184025ISI: 000255661200027OAI: oai:DiVA.org:su-58570DiVA, id: diva2:425042
Note
authorCount :7Available from: 2011-06-20 Created: 2011-06-03 Last updated: 2017-12-11Bibliographically approved

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