Connecting Dopant Bond Type with Electronic Structure in N-Doped Graphene
2012 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 12, no 8, 4025-4031 p.Article in journal (Refereed) Published
Robust methods to tune the unique electronic properties of graphene by chemical modification are in great demand due to the potential of the two dimensional material to impact a range of device applications. Here we show that carbon and nitrogen core-level resonant X-ray spectroscopy is a sensitive probe of chemical bonding and electronic structure of chemical dopants introduced in single-sheet graphene films. In conjunction with density functional theory based calculations, we are able to obtain a detailed picture of bond types and electronic structure in graphene doped with nitrogen at the sub-percent level. We show that different N-bond types, including graphitic, pyridinic, and nitrilic, can exist in a single, dilutely N-doped graphene sheet. We show that these various bond types have profoundly different effects on the carrier concentration, indicating that control over the dopant bond type is a crucial requirement in advancing graphene electronics.
Place, publisher, year, edition, pages
2012. Vol. 12, no 8, 4025-4031 p.
Nitrogen-doped graphene, workfunction, bonding, electronic structure, X-ray spectroscopy
IdentifiersURN: urn:nbn:se:su:diva-81547DOI: 10.1021/nl301409hISI: 000307211000025OAI: oai:DiVA.org:su-81547DiVA: diva2:564096