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Connecting Dopant Bond Type with Electronic Structure in N-Doped Graphene
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2012 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 12, no 8, 4025-4031 p.Article in journal (Refereed) Published
Abstract [en]

Robust methods to tune the unique electronic properties of graphene by chemical modification are in great demand due to the potential of the two dimensional material to impact a range of device applications. Here we show that carbon and nitrogen core-level resonant X-ray spectroscopy is a sensitive probe of chemical bonding and electronic structure of chemical dopants introduced in single-sheet graphene films. In conjunction with density functional theory based calculations, we are able to obtain a detailed picture of bond types and electronic structure in graphene doped with nitrogen at the sub-percent level. We show that different N-bond types, including graphitic, pyridinic, and nitrilic, can exist in a single, dilutely N-doped graphene sheet. We show that these various bond types have profoundly different effects on the carrier concentration, indicating that control over the dopant bond type is a crucial requirement in advancing graphene electronics.

Place, publisher, year, edition, pages
2012. Vol. 12, no 8, 4025-4031 p.
Keyword [en]
Nitrogen-doped graphene, workfunction, bonding, electronic structure, X-ray spectroscopy
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:su:diva-81547DOI: 10.1021/nl301409hISI: 000307211000025OAI: oai:DiVA.org:su-81547DiVA: diva2:564096
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AuthorCount:17;

Available from: 2012-11-01 Created: 2012-10-25 Last updated: 2017-12-07Bibliographically approved

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Pettersson, Lars G. M.
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