Synthesis, Structure, and Properties of the Electron-Poor II-V Semiconductor ZnAs
2014 (English)In: Inorganic Chemistry, ISSN 0020-1669, E-ISSN 1520-510X, Vol. 53, no 16, 8691-8699 p.Article in journal (Refereed) Published
ZnAs was synthesized at 6 GPa and 1273 K utilizing multianvil highpressure techniques and structurally characterized by single-crystal and powder X-ray 7 diffraction (space group Pbca (No. 61), a = 5.6768(2) angstrom, b = 7.2796(2) angstrom, c = 7.5593(2) angstrom, Z = 8). The compound is isostructural to ZnSb (CdSb type) and displays multicenter bonded rhomboid rings Zn2As2, which are connected to each other by classical two-center, two-electron bonds. At ambient pressure ZnAs is metastable with respect to Zn3As2 and ZnAs2. When heating at a rate of 10 K/min decomposition takes place at similar to 700 K. Diffuse reflectance measurements reveal a band gap of 0.9 eV. Electrical resistivity, thermopower, and thermal conductivity were measured in the temperature range of 2-400 K and compared to thermoelectric ZnSb. The room temperature values of the resistivity and thermopower are similar to 1 Omega cm and +27 mu V/K, respectively. These values are considerably higher and lower, respectively, compared to Zn Sb. Above 150 K the thermal conductivity attains low values, around 2 W/m.K, which is similar to that of ZnSb. The heat capacity of ZnAs was measured between 2 and 300 K and partitioned into a Debye and two Einstein contributions with temperatures of theta(D) = 234 K, theta(E1) = 95 K, and theta(E2) = 353 K. Heat capacity and thermal conductivity of ZnSb and ZnAs show very similar features, which possibly relates to their common electron-poor bonding properties.
Place, publisher, year, edition, pages
2014. Vol. 53, no 16, 8691-8699 p.
IdentifiersURN: urn:nbn:se:su:diva-107622DOI: 10.1021/ic501308qISI: 000340576900054OAI: oai:DiVA.org:su-107622DiVA: diva2:749944