Rapid sintering of silicon nitride foams decorated with one-dimensional nanostructures by intense thermal radiation
2014 (English)In: Science and Technology of Advanced Materials, ISSN 1468-6996, E-ISSN 1878-5514, Vol. 15, no 4, 045003Article in journal (Refereed) Published
Silicon nitride foams were prepared by direct foaming and subsequent rapid sintering at 1600 °C. The intense thermal radiation generated under the pressureless spark plasma sintering condition facilitated necking of Si3N4 grains. The prepared foams possessed a porosity of ~80 vol% and a compressive strength of ~10 MPa, which required only ~30 min for the entire sintering processes. Rapid growth of one-dimensional SiC nanowires from the cell walls was also observed. Thermodynamic calculations indicated that the vapor–liquid–solid model is applicable to the formation of SiC nanowires under vacuum.
Place, publisher, year, edition, pages
2014. Vol. 15, no 4, 045003
silicon nitride, foam, spark plasma sintering, nanowire, thermodynamics
Research subject Materials Chemistry
IdentifiersURN: urn:nbn:se:su:diva-109796DOI: 10.1088/1468-6996/15/4/045003OAI: oai:DiVA.org:su-109796DiVA: diva2:767403