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a A Resistance-Switchable and Ferroelectric Metal Organic Framework
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2014 (English)In: Journal of the American Chemical Society, ISSN 0002-7863, E-ISSN 1520-5126, Vol. 136, no 50, 17477-17483 p.Article in journal (Refereed) Published
Abstract [en]

The ever-emerging demands on miniaturization of electronic devices have pushed the development of innovative materials with desired properties. One major endeavor is the development of organic- or organic-inorganic hybrid-based electronics as alternatives or supplements to silicon-based devices. Herein we report the first observation of the coexistence of resistance switching and ferroelectricity in a metal-organic framework (MOF) material, [InC16H11N2O8]center dot 1.5H(2)O, denoted as RSMOF-1. The electrical resistance of RSMOF-1 can be turned on and off repeatedly with a current ratio of 30. A first-principles molecular dynamics simulation suggests that the resistive switching effect is related to the ferroelectric transition of N center dot center dot center dot H-O center dot center dot center dot H-N bridge-structured dipoles of the guest water molecules and the amino-tethered MOF nanochannel. The discovery of the resistive switching effect and ferroelectricity in MOFs offers great potential for the physical implementation of novel electronics for next-generation digital processing and communication.

Place, publisher, year, edition, pages
2014. Vol. 136, no 50, 17477-17483 p.
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Chemical Sciences
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URN: urn:nbn:se:su:diva-113570DOI: 10.1021/ja508592fISI: 000346682600026OAI: oai:DiVA.org:su-113570DiVA: diva2:786469
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AuthorCount:11;

Available from: 2015-02-05 Created: 2015-02-04 Last updated: 2017-12-05Bibliographically approved

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Platero-Prats, Ana E.Zou, Xiaodong
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