Trapped Rydberg ions are a promising new system for quantum information processing. They have the potential to join the precise quantum operations of trapped ions and the strong, long-range interactions between Rydberg atoms. Technically, the ion trap will need to stay active while exciting the ions into the Rydberg state, else the strong Coulomb repulsion will quickly push the ions apart. Thus, a thorough understanding of the trap effects on Rydberg ions is essential for future applications. Here we report the observation of two fundamental trap effects. First, we investigate the interaction of the Rydberg electron with the quadrupolar electric trapping field. This effect leads to Floquet sidebands in the spectroscopy of Rydberg D-states whereas Rydberg S-states are unaffected due to their symmetry. Second, we report on the modified trapping potential in the Rydberg state compared to the ground state which results from the strong polarizability of the Rydberg ion. We observe the resultant energy shifts as a line broadening which can be suppressed by cooling the ion to the motional ground state in the directions orthogonal to the excitation laser.

Trapped Rydberg ions are a promising new system for quantum information processing. They have the potential to join the precise quantum operations of trapped ions and the strong, long-range interactions between Rydberg atoms. Combining the two systems is not at all straightforward. Rydberg atoms are severely affected by electric fields which may cause Stark shifts and field ionization, while electric fields are used to trap ions. Thus, a thorough understanding of the physical properties of Rydberg ions due to the trapping electric fields is essential for future applications. Here, we report the observation of two fundamental trap effects. First, we investigate the interaction of the Rydberg electron with the trapping electric quadrupole fields which leads to Floquet sidebands in the excitation spectra. Second, we report on the modified trapping potential in the Rydberg state compared to the ground state that results from the strong polarizability of the Rydberg ion. By controlling both effects we observe resonance lines close to their natural linewidth demonstrating an unprecedented level of control of this novel quantum platform.

Trapped Rydberg ions are a promising novel approach to quantum computing and simulations. They are envisaged to combine the exquisite control of trapped ion qubits with the fast two-qubit Rydberg gates already demonstrated in neutral atom experiments. Coherent Rydberg excitation is a key requirement for these gates. Here, we carry out the first coherent Rydberg excitation of an ion and perform a single-qubit Rydberg gate, thus demonstrating basic elements of a trapped Rydberg ion quantum computer.

Trapped Rydberg ions are a promising novel approach to quantum computing and simulations. They are envisaged to combine the exquisite control of trapped ion qubits with the fast two-qubit Rydberg gates already demonstrated in neutral atom experiments. Coherent Rydberg excitation is a key requirement for these gates. Here, we carry out the first coherent Rydberg excitation of an ion and perform a single-qubit Rydberg gate, thus demonstrating basic elements of a trapped Rydberg ion quantum computer.

Trapped Rydberg ions are a novel platform for quantum technologies, envisaged to combine the excellent control of trapped ions with the strong interactions found in neutral Rydberg atom systems. While in recent years trapped ions have been coherently excited to Rydberg states and were shown to be stable in the trapping field, strongly interacting trapped Rydberg ions have yet to be realized.

Strong interactions between Rydberg ions are facilitated by microwave dressing.

In this work the microwave dressing of a single trapped Rydberg ions is studied.

The ion is used as a microwave field probe and the polarizability of Rydberg S- and P superposition states is investigated.

This work presents an important stepping stone on the way to the goal of trapped Rydberg ion quantum gates.