Open this publication in new window or tab >> Show others...
2019 (English) In: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, Vol. 99, no 21, article id 214510Article in journal (Refereed) Published
Abstract [en] Complex oxides exhibit a variety of unusual physical properties, which can be used for designing novel electronic devices. Here we fabricate and study experimentally nanoscale superconductor/ferromagnet/ superconductor junctions with the high-Tc cuprate superconductors YBa2 Cu3 O7−x and the colossal magnetoresistive (CMR) manganite ferromagnets La2/3 X1/3 MnO3+δ (X=CaorSr). We demonstrate that in a broad temperature range the magnetization of a manganite nanoparticle, forming the junction interface, switches abruptly in a monodomain manner. The CMR phenomenon translates the magnetization loop into a hysteretic magnetoresistance loop. The latter facilitates a memory functionality of such a junction with just a single CMR ferromagnetic layer. The orientation of the magnetization (stored information) can be read out by simply measuring the junction resistance in a finite magnetic field. The CMR facilitates a large readout signal in a small applied field. We argue that such a simple single-layer CMR junction can operate as a memory cell both in the superconducting state at cryogenic temperatures and in the normal state up to room temperature.
Keywords High-temperature superconductivity, collosal magnetoresistance, oxide electronics
National Category
Condensed Matter Physics
Research subject
Physics
Identifiers urn:nbn:se:su:diva-171104 (URN) 10.1103/PhysRevB.99.214510 (DOI) 000473009200002 () 2-s2.0-85068618863 (Scopus ID)
2019-08-172019-08-172022-11-02 Bibliographically approved