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Zlotnik, SebastianORCID iD iconorcid.org/0000-0003-3891-5209
Publications (1 of 1) Show all publications
Ma, Z., Pietak, K., Piątek, J., Reed DeMoulpied, J., Rokicińska, A., Kuśtrowski, P., . . . Slabon, A. (2020). Semi-transparent quaternary oxynitride photoanodes on GaN underlayers. Chemical Communications, 56(86), 13193-13196
Open this publication in new window or tab >>Semi-transparent quaternary oxynitride photoanodes on GaN underlayers
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2020 (English)In: Chemical Communications, ISSN 1359-7345, E-ISSN 1364-548X, Vol. 56, no 86, p. 13193-13196Article in journal (Refereed) Published
Abstract [en]

Conformal atomic layer deposition (ALD) technique is employed to make semi-transparent TaOxNy, providing the possibility to build semi-transparent oxy(nitride) heterojunction photoanodes on conductive substrates. A generalized approach was developed to manufacture semi-transparent quaternary metal oxynitrides on conductive substrates beyond semi-transparent binary Ta3N5 photoanodes aiming for wireless tandem photoelectrochemical (PEC) cells.
National Category
Chemical Sciences
Identifiers
urn:nbn:se:su:diva-191638 (URN)10.1039/d0cc04894a (DOI)000604493400028 ()33021615 (PubMedID)
Available from: 2021-03-30 Created: 2021-03-30 Last updated: 2022-02-25Bibliographically approved
Identifiers
ORCID iD: ORCID iD iconorcid.org/0000-0003-3891-5209

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