Charge-state selective recombination rate coefficients were measured by time of flight (TOF) analyzed highly charged Si ions extracted from an electron-beam ion trap. Additionally, the combination of simultaneous TOF and x-ray measurements and a separation of the dielectronic recombination contribution in the x-ray spectra is used for extracting electron-impact excitation rate coefficients for several overlaying charge states. Experimentally derived dielectronic recombination spectra for XIII and XIV Si are compared and found in excellent agreement with the results of relativistic many-body perturbation theory calculations.